| PART |
Description |
Maker |
| INA-32063 INA-32063-BLK INA-32063-TR2 INA-32063-TR |
3.0千兆赫宽带硅射频放大器（3.0千兆赫宽频带硅射频集成电路放大器
3.0 GHz Wideband Silicon RFIC Amplifier(3.0 GHz 宽频带硅射频集成电路放大
3V Fixed Gain. Wideband Amplifier
|
Agilent(Hewlett-Packard)
|
| ADG918BRMZ ADG919BCPZ-REEL7 ADG91808 EVAL-ADG918EB |
Wideband, 43 dB Isolation @ 1 GHz, CMOS 1.65 V to 2.75 V, 2:1 Mux/SPDT Switches 0 MHz - 4000 MHz RF/MICROWAVE DIVERSITY SWITCH, 1.25 dB INSERTION LOSS
Wideband 4 GHz, 43 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, 2:1 Mux/SPDT
|
Analog Devices, Inc.
|
| PE6800 PE6800-16 |
0.5 Watts Low Power WR-28 Waveguide Load 26.5 GHz to 40 GHz
|
Pasternack Enterprises,...
|
| PE6802 PE6802-16 |
0.5 Watts Low Power WR-42 Waveguide Load 18 GHz to 26.5 GHz
|
Pasternack Enterprises,...
|
| PTF10007 |
35 Watts, 1.0 GHz GOLDMOS Field Effect Transistor 35瓦，1.0 GHz的GOLDMOS场效应晶体管
35 Watts/ 1.0 GHz GOLDMOS Field Effect Transistor
35 Watts 1.0 GHz GOLDMOS Field Effect Transistor
|
ERICSSON[Ericsson]
Ericsson Microelectronics
|
| PTB20176 |
5 Watts, 1.78-1.92 GHz RF Power Transistor 5瓦，1.78-1.92 GHz射频功率晶体
5 Watts, 1.78?.92 GHz RF Power Transistor
|
ERICSSON[Ericsson]
Ericsson Microelectronics
|
| PTF10137 |
12 Watts, 1.0 GHz GOLDMOS Field Effect Transistor 12瓦，1.0 GHz的GOLDMOS场效应晶体管
12 Watts 1.0 GHz GOLDMOS Field Effect Transistor
|
ERICSSON[Ericsson]
Ericsson Microelectronics
|
| TGA4832-15 |
DC 35 GHz Wideband Amplifier
|
TriQuint Semiconductor
|
| BFT92W-15 |
PNP 4 GHz wideband transistor
|
NXP Semiconductors
|
| BFQ621 |
NPN 7 GHz wideband transistor
|
Philips Semiconductors
|
| BFG94-2015 BFG94-15 |
NPN 6 GHz wideband transistor
|
Quanzhou Jinmei Electro...
|
